Gallium arsenide bismuth (GaAsBi) quantum well laser research has made important progress

Recently, the Chinese Academy of Sciences Shanghai Institute of Microsystem and Information Technology Gallium arsenide bismuth (GaAsBi) quantum well laser research has made important progress. The research team led by Wang Shu-min researched the growth of GaAsAs quantum well materials by molecular beam epitaxy and successfully fabricated the current pump (300 K) GaAs quantum well laser with the longest emission wavelength (1.142 μm) Before breaking the world record of 1.06 microns, the maximum output power of pulsed lasers reached 127 mW and was first reported for continuous lasing at 273 K. A related research paper, "1.142 μm GaAsBi / GaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy," issued at ACS Photonics on June 5, 2017 (DOI: 10.1021 / acsphotonics.7b00240)

Diluted bismuth semiconductor material has a series of excellent characteristics different from the traditional three five family material, is a promising new photoelectric device materials, is also one of the hot areas in the current international research. Gallium arsenic is one of the most promising new materials for uncooled lasers in optical communication systems due to its large band gap shrinkage effect, spin orbit splitting energy and low temperature sensitivity. However, in order to effectively coagulate the bismuth component, gallium arsenide bismuth material growth requires a lower temperature, which easily lead to an increase in defect density and thus affect the material's luminescent properties, laser material growth has great challenges. Institute of Microsystem and Information Technology, Chinese Academy of Sciences Wu Xiaoyan, Pan Wenwu and others based on molecular beam epitaxy technology to optimize the growth of high-quality gallium arsenide and bismuth quantum well materials, the successful preparation of higher performance GaAs arsenic bismuth quantum well lasers, the emission wavelength extended to 1.142μm, while its characteristic temperature and wavelength temperature coefficient are better than the current commercial InP-based lasers. This research will help to promote the application of new rare-earth bismuth materials in optoelectronic devices.

This work has been supported by the 973 project and the National Natural Science Foundation of China.

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